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 Relais / MOS-FET Signalrelais
 AQY221R2S  

 


 
AQY221R2S PhotoMOS Relays
  • Two option package available.
    R type offers greatly reduced in resistance
    C tpye offers lower output capacitance
  • High speed switching Turn on time: 30µ:s (AQY221N2S) Turn off time 30µs (AQY221N2S)
  • Super miniature design
  • Low-level of state leakage current of 10pA
    The SSR has an off state leakage current of several milliamperes, where as this PhotoMOS relay has only 10pA (typical) even with the rated load voltage (AQY221N2S)

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 AQV254H  

 


 
AQV254H PhotoMOS Relays
  • High sensitive and low on restistance
  • Controls various types of loads such as relays, motors, lamps and solenoids
  • Otical coupling for extremely high isolation
  • 5,000 Vrms I/O isolation availabele
  • Low-level off state leakage current
  • Eliminates the need for a power supply to drive the power MOSFET

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 AQZ404  

 


 
AQZ404 PhotoMOS Relays
  • High capacity
    A maximum 0,5A load can be controlled with a 5 mA input current. The ON resistance is low at 2.8 O (typ.)
  • 1 Form B
    This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method

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 AQZ10X_20X  

 


 
AQZ10X_20X PhotoMOS Relays
  • High capacity PhotoMOS Relay in a compact and slim 4-pin SIL
  • Extremely low ON resistance
  • Control low-level signal
  • Power Photo MOS relays feature extremely low closed-circuit voltage to enable control of low-level analog signals without distortion
  • Low-level off state leakage currrent
  • High I/O isolation voltage 2,5000 V
  • Eliminates the need for a counter electromotive protection diode in the drive circuit on the input side
  • Eliminate the need for a power supply to drive the power MOSFET

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 G3VM_61CR  

 


 
G3VM_61CR PhotoMOS Relays
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 G3VM_22FO  

 


 
G3VM_22FO PhotoMOS Relays
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 G3VMXN_4N  

 


 
G3VM-XN_4N MOS FET Relay
  • SSR for Switching Analog Signals, with an I/O Dielectric Strength of 2,5 kVAC
    Using Optical Isolation
  • Switches minute analog signals
  • Linear voltage andd current characteristics
  • Switches AC and DC
  • Low ON-resistance
  • Current leakage less than 1 µA between output terminals when they are open
  • Surface-mounting models also available
  • UL/CSA approval pending

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 G3VM-352J  

 


 
G3VM-352J - MOS FET Relays
Slim, 2.1-mm High Relay Incorporating a MOS FET Optically Coupled with an Infrared LED in a Miniature, Flat SOP Package
  • New models with 2 channels and an 8-pin SOP package included in 350-V load voltage series.
  • Continuous load current of 110 mA
  • Dielectric strength of 1,500 Vrms between I/O.

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 G3VM-353G  

 


 
G3VM-353G - MOS FET Relays
Analog-switching MOS FET Relay with SPST-NC (Single-pole, Single-throw, Normally Closed) Contacts
  • New models with SPST-NC contacts and a 4-pin SOP package included in 350-V load voltage series.
  • Continuous load current of 120 mA.
  • Dielectric strength of 1,500 Vrms between I/O.

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 G3VM-401BY_EY  

 


 
G3VM-401BY/EY - MOS FET Relays
Analog-switching MOS FET Relay with Dielectric Strength of 5 kVAC between I/O Using Optical Isolation.
  • Switches minute analog signals.
  • Leakage current of 1 A max. When output relay is open.

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 G3VM-601BY_EY  

 


 
G3VM-601BY/EY - MOS FET Relays
Analog-switching MOS FET Relay with a Dielectric Strength of 5 kVAC between I/O Using Optical Isolation
  • Switches minute analog signals.
  • Switching AC and DC.
  • Peak load voltage of 600 V.
  • Dielectric strength of 5 kVAC between I/O.

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 G3VM-61A1_D1  

 


 
G3VM-61A1/D1 -MOS FET Relays
Compact, General-purpose, Analog-switching MOS FET Relay, with Dielectric Strength of 2.5 kVAC between I/O Using Optical Isolation
  • Upgraded G3VM-61 A/D Series.
  • Switches minute analog signals.
  • Leakage current of 1 A max. when output relay is open.

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Lieferprogramm 2010